Major Results of Research

Fundamentals of semiconductor sensor design with due attention to the effect of various factors - temperature, pressure and radiation - have been elaborated

Physical and topological models of major types of mechanical sensors and sensors of radiation have been developed.

First Russian integrated pressure sensors with self-compensated temperature characteristics have been developed and put into commercial production.

First Russian pressure sensors with polysilicon dielectric insulation for a wider operating temperature range have been designed and put into commercial production.

5-channeel sound probes for gastric examination based on small-size integrated strain gauges have been developed in cooperation with the Clinical and Experimental Medicine Institute of the Russian Academy of Medical Science.

Fundamental research into processes occurring in microelectronic films and structures to be used in sensor electronics, micro- and nanoelectronics has been carried put.

Unique methods for monitoring the rate of growth of semiconductor structures have been developed.

High sensitive linear and matrix-integrated IK photosensors with an operating range from 6 to 25 mm have been designed.